Pattern formation method, mask for exposure used for pattern formation, and method of manufacturing the same

摘要

In a pattern forming method, a cell pattern of each of memory cells is separated into a first pattern group provided at a predetermined position inside from an endmost portion of a cell and a second pattern group excluding the first pattern group. A mask size of the second pattern group is determined such that the second pattern group secures a sufficient process margin relative to a given size and size accuracy. A mask size of the first pattern group is optimized according to a peripheral pattern environment such that the first pattern group has a desired size under the above condition. A mask pattern of the memory cell is formed according to the mask size of the second pattern group and the first pattern group. The cell pattern is formed on a semiconductor wafer, using the mask pattern.