发明名称 |
Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates |
摘要 |
In selective oxidation of gate structures known per se, which contain a polycrystalline silicon layer and a tungsten layer, tungsten oxide evaporation is prevented or at least substantially reduced by means of a special process control, whereby the gate structure is exposed to a non-aqueous inert gas containing hydrogen before and optionally after a treatment step with a hydrogen/water mixture.
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申请公布号 |
DE10120523(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
DE20011020523 |
申请日期 |
2001.04.26 |
申请人 |
INFINEON TECHNOLOGIES AG;MATTSON THERMAL PRODUCTS GMBH |
发明人 |
HAYN, REGINA;SACHSE, JENS-UWE;SCHOER, ERWIN;KEGEL, WILHELM;STORBECK, OLAF;STADTMUELLER, MICHAEL;ROTERS, GEORG;FRIGGE, STEFFEN |
分类号 |
H01L21/28;H01L21/321;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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