| 摘要 |
PURPOSE: A planarizing method of semiconductor devices is provided to improve a planarization of the semiconductor device by forming a dummy pattern on a region having a low pattern density. CONSTITUTION: A semiconductor substrate(30) includes a cell region(32) having relatively high pattern density and step and a peripheral region(31) having relatively low pattern density and step. Effective patterns(33b,34a,34b) are formed on the cell and the peripheral region(32,31). A dummy pattern(DP) having a relatively thick thickness compared to the effective patterns(EPa) is formed between the effective patterns(34a) of the peripheral region(31). An interlayer dielectric(35) is then formed on the entire surface of the resultant structure, and planarized by CMP(Chemical Mechanical Polishing). The thickness of the effective patterns(EPb) in the cell region(32) is relatively thick compared to the thickness of an effective patterns(EPa) in the peripheral region(31).
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