| 发明名称 |
Chemical vapor deposition of silicon oxide films |
| 摘要 |
<p>A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided. The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture. The first gas mixture comprises tetra-ethyl-ortho-silicate (TEOS), helium (He) and nitrogen (N2). The second gas mixture comprises ozone (O3) and optionally, oxygen (O2).</p> |
| 申请公布号 |
EP1253630(A1) |
申请公布日期 |
2002.10.30 |
| 申请号 |
EP20020250829 |
申请日期 |
2002.02.07 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MUKAI, KEVIN M.;NEMANI, SRINIVAS |
| 分类号 |
H01L21/31;C23C16/42;C23C16/40;H01L21/205;H01L21/314;H01L21/316;H01L21/76;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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