发明名称 THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY
摘要 PURPOSE: A thin film transistor substrate, a method for manufacturing the same, a liquid crystal display are provided to easily repair wiring by a laser irradiation progressed to solve inferior contact of a drain electrode and a pixel electrode. CONSTITUTION: A thin film transistor substrate includes a substrate; a plurality of gate wiring(Gn,...,Gn-1) formed on the substrate, each including a main gate line(22), an auxiliary gate line(29), a gate electrode(26), a gate pad(24) formed at one end of the main gate line; a gate insulating film covering the gate lines; semiconductor patterns(42) formed on the gate insulating film; a plurality of data wiring, each including a data line(62) formed on the gate insulating film, a source electrode(65) connected to the data line for contacting with the semiconductor pattern, a drain electrode(66) contacting with the semiconductor pattern corresponding to the source electrode and placed at a gap with the auxiliary gate line of the gate wiring placed at the front end; a protective film covering the data wiring; first, second and third contact holes(72,74,76), each revealing the drain electrodes, the data pads, the gate pads; pixel electrodes(82) contacting with the drain electrodes through the first contact holes, auxiliary data pads(84) and auxiliary gate pads(86), each contacting with the data pad and the gate pad through the second contact hole and the third contact hole.
申请公布号 KR20020081858(A) 申请公布日期 2002.10.30
申请号 KR20010021297 申请日期 2001.04.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DONG GYU
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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