发明名称 |
Semiconductordevice having a ferroelectric capacitor and fabrication process thereof |
摘要 |
<p>A semiconductor device has a ferroelectric capacitor including a ferroelectric film provided on a lower electrode and an upper electrode provided on the ferroelectric film, wherein the upper electrode is formed of a first layer of a non-stoichiometric oxide and a second layer of a non-stoichiometric or stoichiometric oxide provided on the first layer, the second oxide having a composition closer to the stoichiometric composition as compared with the first layer.</p> |
申请公布号 |
EP1253627(A2) |
申请公布日期 |
2002.10.30 |
申请号 |
EP20010122797 |
申请日期 |
2001.09.21 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKAMATSU, TOMOHIRO;NAKAMURA, KO;MATSUURA, KATSUYOSHI |
分类号 |
H01L21/8246;H01L27/105;H01L21/02;H01L21/314;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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