Method for sealing a memory device

摘要

The present invention relates to a method for sealing a nonvolatile memory device, characterized in that to comprise the following steps of: a) defining a nonvolatile memory cell (20), being composed by the overlap of a tunnel oxide (3), of a floating gate (1), of an interpoly dielectric (2), and of a control gate (4); b) deposing a silicon oxide layer (11) by a CVD (Chemical Vapor Deposition) at a temperature lower than 1000 DEG C on said control gate (4); c) densifing said silicon oxide layer (11) by a further thermal treatment (13). (Figure 5). <IMAGE>