METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of a semiconductor device is provided to previously prevent secondary defects of a silicon substrate by growing an amorphous silicon in a trench region using SPE(Solid Phase Epitaxy). CONSTITUTION: An isolation layer(102') is formed at a field region of a silicon substrate(100). A trench is formed by etching the exposed silicon substrate(100). An amorphous silicon(106) is sufficiently filled in the trench. An ion-implanted region for controlling a threshold voltage and an ion-implanted region for controlling a punch-through are formed in the trench. A channel stop region(112) is formed at the lower portion of the isolation region and a P-well(114) is formed in the substrate by implanting sequentially dopants. By annealing the resultant structure, the buried amorphous silicon(106) is recrystallized to solid phase epitaxy, thereby preventing secondary defects of the silicon substrate(100).