发明名称 Semiconductor device provided with fuse and method of disconnecting fuse
摘要 <p>A high-strength protective member (14c) made of tungsten is disposed under a disconnecting point of a fuse (15). This protective member (14c) is formed simultaneously with formation of a via contact portion (14a, 14b) which connects the fuse (15) with wiring (13a, 13b), for example.</p>
申请公布号 EP1253641(A2) 申请公布日期 2002.10.30
申请号 EP20020252413 申请日期 2002.04.03
申请人 FUJITSU LIMITED 发明人 TATEMATSU, TSUTOMU;TOGASHI, KENGI;NAKADA, MASAYUKI;SAWADA, TOYOJI;SUKEGAWA, KAZUO;YAMADA, TOMOYUKI;ARISAKA, YOSHIKAZU
分类号 H01L21/82;H01L21/8242;H01L23/525;H01L27/10;H01L27/108;(IPC1-7):H01L23/525 主分类号 H01L21/82
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