| 摘要 |
PURPOSE: To provide a semiconductor device that can be manufactured, without having to add special manufacturing process by forming a MIM capacitor having proper characteristics on a semiconductor substrate, and to provide a method of manufacturing the device. CONSTITUTION: The MIM capacitor 11, (composed of a lower electrode film 8a, a capacitor insulating film 9a, and an upper electrode film 10a) provided on an lower interlayer insulating film 3, is formed to the same height as that of a plug 14a which connects lower-layer wiring 6 and upper-layer wiring 14c to each other, so that an upper electrode connecting hole is not required.
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