发明名称 |
Self-amorphized regions for transistors |
摘要 |
A method of manufacturing an integrated circuit may include the steps of forming a deep amorphous region and doping the deep amorphous region. The doping of the deep amorphous region can form source and drain regions with extensions. After doping, the substrate is annealed. The annealing can occur at a low temperature. The deep amorphous region can be formed with a self-amorphizing implant.
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申请公布号 |
US6472282(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US20000639380 |
申请日期 |
2000.08.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN |
分类号 |
H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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