发明名称 |
Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface |
摘要 |
A semiconductor device includes a first region of semiconductor material, which is doped to a first concentration with a dopant of a first conductivity type. A gate trench formed within the first region has sides and a bottom. A drain access trench is also formed within the first region, which also has sides and a bottom. A second region of semiconductor material is located within the first region and adjacent to and near the bottom of the gate trench. The second region extends to a location adjacent to and near the bottom of the drain access trench. The second region is of the first conductivity type and has a higher dopant concentration than the first region. A gate electrode is formed within the gate trench. A layer of gate dielectric material insulates the gate electrode from the first and second regions. A drain region of semiconductor material is located within the drain access trench. The drain region is of a first conductivity type and has a higher dopant concentration than the first region. A source region is formed on the surface of the first semiconductor region and a body region is formed within the first region beneath the source region. The body region has a second conductivity type opposite to the first conductivity type.
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申请公布号 |
US6472709(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US20000516285 |
申请日期 |
2000.03.01 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
BLANCHARD RICHARD A. |
分类号 |
H01L29/43;H01L21/336;H01L29/06;H01L29/08;H01L29/417;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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