发明名称 Method of via patterning utilizing hard mask and stripping patterning material at low temperature
摘要 A method for fabricating an interconnect system is provided. A low dielectric constant layer (LDCL) is formed onto a substrate. A hard mask is formed onto the LDCL. A patterning material is formed onto the hard mask. The patterning material is via patterned. A via pattern of the patterning material is transferred to the hard mask. The patterning material is stripped at a substantially low temperature. Vias are formed through the LDC using a via pattern formed in the hard mask.
申请公布号 US6472315(B2) 申请公布日期 2002.10.29
申请号 US20010808758 申请日期 2001.03.14
申请人 INTEL CORPORATION 发明人 NGUYEN PHI L.;WONG LAWRENCE D.
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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