发明名称 |
Dielectric layer with treated top surface forming an etch stop layer and method of making the same |
摘要 |
A metal interconnect arrangement provides a dielectric layer that has its upper surface treated to provide an etch stop etch stop layer. The upper surface is subjected to a plasma etch that treats, such as by carbonization, the dielectric material in a manner that alters the etch characteristics of the dielectric material. After a second dielectric layer is formed over the treated surface of the first dielectric layer, an etching may be performed through the second dielectric layer that stops on the treated surface of the first dielectric layer in a damascene interconnect process.
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申请公布号 |
US6472231(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US20010770469 |
申请日期 |
2001.01.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GABRIEL CALVIN T.;OKADA LYNNE A. |
分类号 |
H01L21/768;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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