发明名称 |
Flash memory device |
摘要 |
A flash memory device is configured to address the problems that charges generated when via hole is etched is charged to a junction region through a metal line and are thus concentrated on a tunnel oxide film, thus making distribution of a threshold voltage over a cell uneven when a device is driven. In order to solve the problems, the device has a junction region in an outside circuit region so charges generated when via hole is etched is concentrated on the junction region formed in the outside circuit region. Thus, it can prevent concentration of the charges on the cell and thus make uniform distribution of the threshold voltage over a cell array.
|
申请公布号 |
US6472752(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US20000717032 |
申请日期 |
2000.11.22 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM BONG KIL;JUNG SUNG MUN |
分类号 |
H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|