| 摘要 |
A method of manufacturing a semiconductor device including a plurality of active regions of different area and device isolation regions formed between the active regions, the method including the steps of: forming a first insulating film and a second insulating film in sequence on a semiconductor substrate; forming a plurality of openings through the first and second insulating films at desired positions; forming trenches in the semiconductor substrate in the openings to define active regions of different area and device isolation regions between the active regions; depositing a third insulating film on the semiconductor substrate so that the trenches are filled with the third insulating film; flattening the third insulating film by CMP until the second insulating film is exposed in the active regions; and removing the third insulating film remaining in the active regions because of a difference in polishing rate derived from variation in deposit density in the third insulating film and simultaneously reducing the third insulating film in the trenches.
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