发明名称 |
Triode-type field emission device having field emitter composed of emitter tips with diameter of nanometers and method for fabricating the same |
摘要 |
A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.
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申请公布号 |
US6472802(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US19990471892 |
申请日期 |
1999.12.23 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHOI SUNG-YOOL;PAEK MUN-CHEOL;CHO KYOUNG-IK;HUR JEEN;HAN GI-PYUNG |
分类号 |
H01J1/30;H01J3/02;H01J31/12;(IPC1-7):H01J1/02 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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