发明名称 Triode-type field emission device having field emitter composed of emitter tips with diameter of nanometers and method for fabricating the same
摘要 A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.
申请公布号 US6472802(B1) 申请公布日期 2002.10.29
申请号 US19990471892 申请日期 1999.12.23
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 CHOI SUNG-YOOL;PAEK MUN-CHEOL;CHO KYOUNG-IK;HUR JEEN;HAN GI-PYUNG
分类号 H01J1/30;H01J3/02;H01J31/12;(IPC1-7):H01J1/02 主分类号 H01J1/30
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