发明名称 |
Process for producing bismuth tertiary amyloxide |
摘要 |
This invention provides a process for producing bismuth tertiary amyloxide which is a starting material for forming a ferroelectric film such as SrBi2Ta2O9 containing bismuth oxide, or an oxide superconductive film such as Bi2Sr2CaCu2O8, by the CVD method or sol-gel method. This process comprises reacting bismuth bromide with sodium tertiary amyloxide or potassium tertiaryamyloxide in a toluene solvent containing 5 to 30 weight % tetrahydrofuran, then separating a byproduct sodium bromide or potassium bromide by filtration and recovering bismuth tertiary amyloxide by distillation under reduced pressure.
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申请公布号 |
US6472547(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US20020080792 |
申请日期 |
2002.02.20 |
申请人 |
KABUSHIKIKAISHA KOJUNDOKAGAKU KENYUSHO |
发明人 |
MORISAWA SATORU;MATSUMOTO MASAMICHI;KADOKURA HIDEKIMI |
分类号 |
C07F9/94;(IPC1-7):C07F9/94 |
主分类号 |
C07F9/94 |
代理机构 |
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