| 摘要 |
PURPOSE: An exposure apparatus is provided to obtain excellent control precision of a focus position and a slope with respect to a shot area in the outer periphery of a wafer when a reticle pattern is exposed onto each shot area on the wafer. CONSTITUTION: When the pattern of a reticle is exposed onto the shot areas on the wafer while reading ahead to detect the focus positions at read-ahead regions before an exposure region(16) with respect to the scanning direction, for each of the shot areas on the peripheral region of the wafer(15), the exposure is performed by scanning the wafer so that a slit-like exposure region moves relatively from the inside to the outside of the wafer. When the absolute value of the difference between the focus position at the read-ahead region and the focus position of an imaging plane in the exposure region exceeds an allowable value, the height of the wafer is fixed at the height set until then while ignoring the read-ahead data.
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