Method of manufacturing a channel stop implant in a semiconductor device

摘要

The present invention provides a method of manufacturing a semiconductor device, and a related method manufacturing an integrated circuit. In one embodiment, the method of manufacturing a semiconductor device includes creating a source/drain region between an electrode and an isolation structure located on a substrate. The method further includes implanting a dopant at a predetermined implant dopant concentration through an opening formed in a channel stop mask and located between the electrode and the isolation structure to form a channel stop between the source/drain region and the isolation structure.