发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes: a memory block including a plurality of memory cells; and a test pattern generation circuit for generating at least one test pattern for use in testing the memory block. A first bus line for coupling the memory block and the test pattern generation circuit has a larger width than that of a second bus line for coupling the memory block to the exterior of the semiconductor memory device.
申请公布号 US6473873(B1) 申请公布日期 2002.10.29
申请号 US19980206534 申请日期 1998.12.07
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 AKAMATSU HIRONORI;IWATA TORU
分类号 G11C29/10;G11C29/36;H01L27/108;(IPC1-7):G06F11/00 主分类号 G11C29/10
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