发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes: a memory block including a plurality of memory cells; and a test pattern generation circuit for generating at least one test pattern for use in testing the memory block. A first bus line for coupling the memory block and the test pattern generation circuit has a larger width than that of a second bus line for coupling the memory block to the exterior of the semiconductor memory device.
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申请公布号 |
US6473873(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US19980206534 |
申请日期 |
1998.12.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
AKAMATSU HIRONORI;IWATA TORU |
分类号 |
G11C29/10;G11C29/36;H01L27/108;(IPC1-7):G06F11/00 |
主分类号 |
G11C29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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