Self-aligned metal-insulator-metal capacitor for integrated circuits

摘要

A fabrication method for a self-aligned metal-insulator-metal capacitor is described. A plurality of metal interconnects is provided. A metal interconnect is etched back to form a recess in the metal interconnect using a patterned photoresist as a mask. A capacitor insulator is formed on the resulting structure, partially filling the recess in the metal interconnect and covering other metal interconnects. A top electrode metal layer is then deposited on the capacitor insulator, completely filling the recess in the metal interconnect. The top electrode metal layer that is formed above the recess of the metal interconnect is subsequently removed.