发明名称 |
Method of fabricating bipolar transistors with independent impurity profile on the same chip |
摘要 |
Bipolar transistors of different designs, particularly designs optimized for different high frequency applications are formed on the same substrate by separate base layer formation processes for epitaxial growth including different material concentration profiles of germanium, boron and/or carbon. Epitaxial growth of individual growth layers by low temperature processes is facilitated by avoiding etching of the silicon substrate including respective collector regions through use of an etch stop that can be etched selectively to silicon. Annealing processes can be performed between growth of respective base layers and/or performed collectively after all transistors are substantially completed.
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申请公布号 |
US6472288(B2) |
申请公布日期 |
2002.10.29 |
申请号 |
US20000733330 |
申请日期 |
2000.12.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FREEMAN GREGORY G.;SCHONENBERG K. T.;STEIN KENNETH J.;SUBBANNA SESHADRI |
分类号 |
H01L21/8222;H01L27/082;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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