摘要 |
A technique for forming integrated circuit device contacts includes the formation of nitride spacers along side gate electrodes for LDD definition. In addition, a nitride cap layer is formed over the gate electrodes. When a contact opening is formed through the interlevel oxide dielectric, the nitride cap and sidewall spacers protect the gate electrode from damage and shorting. A highly doped poly plug is formed in the opening to make contact to the underlying substrate. Metalization is formed over the poly plug in the usual manner.
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