| 摘要 |
A photoelectric transducer comprises elements including P- and N-type regions to perform photoelectric conversion using photovoltaic effect of the P-N junction, and MOS transistors disposed around each element. A P-type well on which the MOS transistors are formed, has a higher impurity concentration than the P-type region. The P-type region has an impurity concentration distribution in which the concentration first increases gradually in the direction toward the interior, and then decreases gradually after a predetermined point of depth, and the maximum peak value of the concentration at the predetermined point is lower than the maximum peak value of the concentration of the P-type well. It becomes possible to improve sensitivity and reduce leakage current, besides, to realize a considerable reduction in cross talk with an adjacent pixel. A high-performance and highly-reliable photoelectric transducer can be obtained thus.
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