Antiferromagnetic layer system and methods for magnetically storing data in antiferromagnetic layer systems of the like

摘要

The invention is used in the field of materials engineering and relates to antiferromagnetic layer systems and methods for magnetically storing data, which can be used, for example, in computer hard disks. The object of the invention is to disclose an antiferromagnetic layer system and methods with the aid of which a specific writing and reading of information is possible in such antiferromagnetic layer systems. The object is attained through an antiferromagnetic layer system, comprising at least one ferromagnetic and at least one antiferromagnetic layer, whereby the Curie temperature of the ferromagnetic layer material is greater than the blocking temperature of the antiferromagnetic layer material and in which the ferromagnetic and antiferromagnetic layer(s) are coupled to one another at least with regard to their magnetization configuration by means of exchange anisotropy effects, and in which the layer thickness of the antiferromagnetic layer(s) is a function of the operating temperature of the employed antiferromagnetic layer system, whereby the layer thicknesses likewise increase with increasing operating temperatures.