METHOD AND APPARATUS OF COLD WALL CVD

摘要

PURPOSE: A method and an apparatus of cold wall CVD(Chemical Vapor Deposition) are provided to improve reliability of a semiconductor device by preventing uneven thickness of a thin film and environmental pollution of the inside of a chamber. CONSTITUTION: An exhaust portion(58,60) exhausts air from the inside of a chamber(52) to the outside. A gas supply portion(54) supplies a source gas to the inside of the chamber(52). The exhaust portion(58,60) is formed with the first exhaust portion(60) for exhausting the internal air of the chamber(52) and the second exhaust portion(58) for exhausting the peripheral air of the chamber(52). A susceptor(66) is installed in the inside of the chamber(52). The susceptor(66) is supported by a support portion(68). A heater(67) and an inner electrode(69) are installed in the inside of the susceptor(66). A thermally reflective plate(62) is installed on an upper portion of the susceptor(66). A window(63) is formed on a surface of the thermally reflective plate(62). A heater control portion(65) controls temperature of the heater(67) and a movement of the susceptor(66). The inner electrode(69) and the thermally reflective plate(62) are connected with an RF power source(82). The RF power source(82) is controlled by a switch(80).