METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for fabricating a semiconductor substrate is provided to solve a tilt problem caused by a heterogeneous material layer without using a heterogeneous material layer having a different property from that of a growth semiconductor substrate such as a silicon oxide layer or a silicon nitride layer, and to decrease resistance by guaranteeing uniformity of a growth surface. CONSTITUTION: A roughness part of a predetermined depth is formed in a GaN substrate. A GaN thin film covering the roughness part is formed on the GaN substrate. In forming the GaN thin film, the side surface growth rate is so fast to make a vertical growth portion of the concave of the roughness part covered with a side surface growth portion.