发明名称 |
METHOD FOR COMPENSATION OF STRESS IN VACUUM DEPOSITION PROCESS OF DEVICE |
摘要 |
PURPOSE: A method for compensation of stress in vacuum deposition process of device is provided to prevent damage to a device and to stabilize a fine structure of a subsequent layer on a deposited thin film, by eliminating residual stress generated after the thin film is deposited on the device. CONSTITUTION: A bimetal(3) that makes the device(1) transformed by the stress of the deposited thin film and causes an opposite transformation, and an electrical heater(4) for supplying heat to the bimetal, are sequentially attached to the back surface of a deposition surface of the device. The stress generated between the tin film and the device is eliminated by the stress generated in the bimetal.
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申请公布号 |
KR20020080760(A) |
申请公布日期 |
2002.10.26 |
申请号 |
KR20010020518 |
申请日期 |
2001.04.17 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
LEE, YEONG HO;SUNWOO, JIN HO |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
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