METHOD OF MONITORING PLASMA PROCESSOR, PLASMA PROCESSING METHOD AND APPARATUS

摘要

PROBLEM TO BE SOLVED: To solve the problem that the impedance change of a high frequency power line for a plasma processor is detected from the reduction of a film forming rate/etching rate requiring much time for detecting the condition change of the processor. SOLUTION: A voltage measuring terminal 6 is disposed on the processor and the change of a measured voltage waveform is monitored, using a means 7 for connecting with the measuring terminal 6, a means 8 for measuring the voltage waveform, and a means 9 for storing the measured voltage waveform.