| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile memory in which stabilization of information holding operation is realized with simple constitution. SOLUTION: This memory is a non-volatile memory having a plurality of word lines and a plurality of bit lines, and a plurality of memory cells having storage information corresponding to electric charge quantity accumulated in a floating gate at intersections of a plurality of the word lines and a plurality of the bit lines, and performing electrically write-in operation and erasure operation of the storage information, and when such write-in operation is performed that first voltage is given to a selection word line, second voltage is given to a selection bit line, and electrons are injected to the floating gate of a selection memory cell from the selection bit line, corresponding to the potential difference, third voltage reducing potential difference with the selection bit line is given by a non-selection bit line, the non-selection word lines are divided into a group to which a fourth potential causing disturbance extracting electrons accumulated in the floating gate to the non-selection bit line side is given and a group to which a fifth potential causing disturbance injecting electrons into the floating gate from the non-selection bit line is given.</p> |
