| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing composition which can obtain a superior surface by polishing, at a high speed, a semiconductor device which has a layer made of a tantalum contained compound and a layer made of copper, on a substrate. SOLUTION: A polishing composition contains (a) abrasives, (b) a free radical scavenger, (c) a polishing actuator, (d) anticorrosives, (e) a hydrogen peroxide, and (f) water, and a polishing method using the same is also provided. The (b) free radical scavenger prevents generation of surface defects such as recesses by scavenging a free radical such as hydroxy radical generated during polishing.</p> |
