SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technique for effectively removing metallic element remaining in a semiconductor film which is obtained by using the metallic element having catalytic action for crystallization of an amorphous semiconductor film. SOLUTION: To remove catalyst element used for crystallization of a semiconductor film having an amorphous structure, a region whereto rare gas element is added, or a semiconductor film whereto rare gas element is added is formed, heat treatment is carried out, and catalyst element is moved there and gettering is accomplished. A thin oxide film is formed in an interface between a semiconductor film whereto rare gas element is added and a semiconductor film having a crystal structure.