LASER ANNEALING METHOD FOR SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To provide an excimer laser annealing method(ELA) for obtaining a p-Si good in crystallinity in the ELA for forming the p-Si for p-Si TFT LCDs. SOLUTION: In a scanning direction of a laser beam, it has an energy region exceeding a threshold energy Eth which maximizes the grain size comparatively in the front of a beam profile and an energy region not exceeding the threshold energy at sufficiently back. As the beam moves, the irradiation energy goes from up to down the threshold energy level and, in this process, the best annealing is performed in an energy region sufficiently increasing the grain size just under the threshold energy.