| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a GaAsFFT used for high-frequency devices has adopted such a one-layer wiring structure as to interrupt the gate from the drain by its source, for reducing the parasitic capacitance, and there has been the necessity of shrinking its chip size so as to lower the cost for winning a price competition with silicon semiconductor chips. SOLUTION: By noting that in a GaAsFFT used for a local oscillation its low phase-noise and its power are made more important than its high-frequency characteristic, its gate and its source are so made to intersect each other in their coupling portion as to give it a two-layer wiring structure. As a result, since low phase-noise required as the GaAsFFT used for the local oscillation remains unchanged although the capacitance is generated, the chip size can be reduce so largely as to enable to realize an inexpensive GaAsFFT than an ultra high-frequency silicon semiconductor FFT.
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