| 摘要 |
PROBLEM TO BE SOLVED: To provide a durable semiconductor device that can save power and can be activated, and at the same time, has stable electric performance. SOLUTION: On a post section 7d of the drain side of a drain-side terminal 3d of a lead frame 3, a semiconductor element 5 is joined while source and gate electrodes 4s and 4g of the semiconductor element turn upward. The gate electrode 4g of the element 5 is electrically connected to a gate-side post section 7g of a gate-side terminal 3g of the frame 3 by a B'g wire (bonding wire) 8. One connection strap 6 made of aluminum is simultaneously and electrically joined by ultrasonic bonding, so that both ends 6a and 6b of the connection strap are brought into direct contact with the electrode 4s and a post section 7s. In this case, the connection strap is formed so that a middle section 6c is spaced from the element 5. The middle section 6c is positioned between the section 6a that is formed into a nearly plate shape, and at the same time, connected to the source electrode 4s, and the section 6b that is connected to the source-side post section 7s. |
