EPITAXIAL BASE BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial base bipolar transistor which has low base resistance and whose capacitance does not increase. SOLUTION: This epitaxial base bipolar transistor is provided with an epitaxial silicon layer on a single crystal semiconductor substrate 54, a raised emitter 64 on the surface of the semiconductor substrate, a raised extrinsic base 58e on the surface of the semiconductor substrate, an insulator 66 as a spacer between the raised emitter and raised extrinsic base, and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the semiconductor substrate. The emitter diffusion has an emitter diffusion junction depth, and the raised emitter extends to the surface of the semiconductor substrate and the raised extrinsic base extends to the surface of the semiconductor substrate. A difference of height between the surfaces of the emitter and base is less than 20% of the emitter diffusion junction depth.