| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel CPP type magnetoresistance effect type element, capable of providing reproducing information of a high S/N ratio by reducing an external noise. SOLUTION: The magnetoresistance effect type element comprises a magnetoresistance effect film 1 interposed above a first upper shield film 2 and below a first lower shield film 3, a second upper shield film 4 and a second lower shield film 5 formed above the film 2 and below the film 3. In this case, the film 2 and the film 3 function as current supply layers to the film 1 and also as lead films.
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