| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor of high output wherein a structure for preventing a hetero interface between arsenic compound and phosphorus compound from affecting characteristics of a device is adopted, and a high frequency module whereon an MMIC prepared by using the transistor is mounted and high output is obtained. SOLUTION: In a field effect transistor which has at least a channel layer for traveling of carrier, a carrier supply layer for supplying carrier to the channel layer and a buffer layer for flattening the channel layer, an insertion layer whose band gap is larger then that of the buffer layer is provided between the buffer layer and the channel layer. The structure is realized by forming the substrate side of a channel layer with an InP layer, an insertion layer of an InAlP layer, and a buffer layer of InAlAs layer, for example.
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