| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having metal wires formed on an upper layer wire by RIE using tungsten as a contact burying material in which tungsten can be prevented from being etched by chemical due to the misalignment of a pattern at the time of patterning the upper layer interconnect, no inclusion margin is required at the time of patterning the upper layer interconnect, and the reduction of a pattern size is facilitated. SOLUTION: The semiconductor device comprises a conductive layer 1 formed on a semiconductor substrate, an insulation layer 2 deposited on the conductive layer and flattened, a plug buried up to an intermediate height in a contact hole formed at a part of the insulation layer and including tungsten 4 contacting with the conductive layer, and the metal wires (5, 6 and 7) formed on the insulation layer while contacting the upper surface of the plug entirely.
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