发明名称 METHOD AND SYSTEM FOR WAFER LEVEL TUNING OF BULK SOUND RESONATOR AND FILTER
摘要 PROBLEM TO BE SOLVED: To provide a method and a system for obtaining a desired resonance frequency of a bulk sound wave device within a specified permissible tolerance. SOLUTION: The method for turning the bulk sound wave device formed of a plurality of sound wave generation and control layers on a substrate includes a process of providing a mask with an aperture near to the surface of the device, a process of varying the thickness of the device by providing a particle beam onto the mask, making at least a part of the particle beam pass through the aperture, and bringing the device surface into contact with a contact area substantially segmented by the aperture, and a process of varying the contact area by rearranging the aperture of the mask laterally on the device surface.
申请公布号 JP2002311959(A) 申请公布日期 2002.10.25
申请号 JP20020018553 申请日期 2002.01.28
申请人 NOKIA CORP 发明人 ELLAE JUHA;TIKKA PASI;KAITILA JYRKI
分类号 G10K11/02;H01L41/22;H03H3/013;H03H3/04 主分类号 G10K11/02
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