TRANSPARENT ELECTRODE, MANUFACTURING METHOD THEREOF AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a p-type electrode superior in light transmission for group III nitride semiconductor light emitting elements and a group III nitride semiconductor light emitting element utilizing the same. SOLUTION: A thin film of gold simple substance is formed on a p-type group III nitride semiconductor surface and the surface of the gold thin film is protected with a silicon dioxide thin film to form a light-transmitting p-type electrode. The silicon dioxide thin protective film covering the gold thin film prevents gold from balling up even in an annealing process for obtaining an Ohmic junction, thereby obtaining a high light transmission.