| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which initial resistance can be kept even if stress is applied by packaging and a conventionally required fuse is eliminated, a highly accurate breeder resistor circuit in which an accurate voltage division ratio can be kept, and a highly accurate semiconductor device using such a breeder resistor circuit, e.g. a voltage detector or a voltage regulator. SOLUTION: In a semiconductor device comprising a resistor, the resistor is formed by integrating a P type resistor formed of a P type semiconductor and an N type resistor formed of a N type semiconductor wherein the P type resistor is arranged on the low potential side and the N type resistor is arranged on the high potential side. The semiconductor device can be conducted by irradiating a P-N junction with a laser beam thereby destroying rectification properties. Especially, the current drive capacity of a driver MOS is enhanced by employing a thin P type polysilicon film having high impurity concentration equal to that of the contact region of a metal wire of the P type resistor in the gate electrode of an MOS transistor.
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