| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of improving the characteristics and reliability of the semiconductor device by stably forming a ruthenium oxide layer on the surface of a ruthenium layer. CONSTITUTION: A lower insulating layer(13) having a storage node contact plug(19), is formed on the upper portion of a semiconductor substrate(11). After sequentially depositing a titanium/titanium nitride layer(21) and a ruthenium layer(23) on the entire surface of the resultant structure, the resultant structure is selectively etched by using a storage node mask as an etching mask. An insulating layer(27) containing oxygen is formed on the resultant structure. A ruthenium oxide layer(29) used as a storage node, is formed on the ruthenium layer by reacting the ruthenium layer with the insulating layer using a heat treatment. After removing the insulating layer, a dielectric layer and an upper electrode are formed on the resultant structure.
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