发明名称 LAYER TO BE FIXED, FORMING METHOD THEREFOR, SPIN VALVE STRUCTURE AND FORMING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a practical method for forming spin valve structure provided with a layer to be fixed, in which the opening of a hysterisis curve is suppressed and which is not destroyed by software ESD in a low magnetic field without being affected by ESD phenomenon. SOLUTION: Since a process for sequentially forming a first magnetic layer, a spacer layer having the thickness of not more than 0.6 nm and a second magnetic layer and a process for annealing all the layers in the remarkably low magnetic field of not more than 4.0×10<5> A/m are included, the stable layer to be fixed is not destroyed by software ESD, and spin valve structure including the layer can be formed in an actual manufacture process by an applicable condition without being affected by ESD phenomenon in the forming process.
申请公布号 JP2002314171(A) 申请公布日期 2002.10.25
申请号 JP20020014712 申请日期 2002.01.23
申请人 HEADWAY TECHNOLOGIES INC 发明人 MIN RI;SEI SHUKO;NYO EIDO;KAN CHURYO;KOKU KYOSHU
分类号 G11B5/39;G11B5/31;H01F10/16;H01F10/32;H01F41/30;H01L43/08;H01L43/12;(IPC1-7):H01L43/12 主分类号 G11B5/39
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