| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a lateral bipolar transistor, which can avoid the conventional problem in SOI technology. SOLUTION: A lateral bipolar transistor having a doped area of a small lateral direction depth can be realized by a method for manufacturing a lateral bipolar transistor provided with a collector area and a base area in an SOI wafer slice. In this case, the lateral bipolar is provided with an insulation layer, a silicon layer formed on the insulation layer, a protection covering made of oxide formed on the silicon layer, a trench that is formed penetrating the protection layer and silicon layer to the insulation layer having substantially a lateral wall body. Impurities are injected into the silicon layer to provide a boundary in the wall body by a plane located substantially in the lateral direction of the protection covering and silicon layer, and in this case, injection is performed on one plane of the silicon layer in the substantially lateral direction. The injection is preferably performed at an inclination angle of 30 to 60 degrees between the normal-line direction to wafer slice and the direction of ion beam of ion injection to one plane in the substantially lateral direction of the silicon layer.
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