发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a means improving the bending strength of an IC so as to prevent chip cracking due to local card bending. SOLUTION: In a method for manufacturing a semiconductor device, in the biaxial process of grinding a semiconductor wafer, a material whose grain size is finer than before is used for a grindstone to be used for grinding and the revolution of the grindstone is increased (6000 r.p.m) preferably.
申请公布号 JP2002313763(A) 申请公布日期 2002.10.25
申请号 JP20010117134 申请日期 2001.04.16
申请人 HITACHI CHEM CO LTD 发明人 SHIBUYA MASAHITO;HIMORI KOJI;ISHIZAKA HIRONOBU;KISE YOSHITAKA
分类号 B24B7/20;B24B1/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B7/20
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