发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a means improving the bending strength of an IC so as to prevent chip cracking due to local card bending. SOLUTION: In a method for manufacturing a semiconductor device, in the biaxial process of grinding a semiconductor wafer, a material whose grain size is finer than before is used for a grindstone to be used for grinding and the revolution of the grindstone is increased (6000 r.p.m) preferably.
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申请公布号 |
JP2002313763(A) |
申请公布日期 |
2002.10.25 |
申请号 |
JP20010117134 |
申请日期 |
2001.04.16 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
SHIBUYA MASAHITO;HIMORI KOJI;ISHIZAKA HIRONOBU;KISE YOSHITAKA |
分类号 |
B24B7/20;B24B1/00;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
B24B7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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