| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device of ridge waveguide type which exhibits a low driving voltage, a largeθ// and satisfactory optical power- injection current characteristics up to the high-power region, namely exhibits a high kink level. SOLUTION: The group III-V nitride compound semiconductor laser device has an oscillation wavelength in the vicinity of 410 nm, and has the same structure as a conventional semiconductor laser device except that the current narrowing layer provided in a ridge 26 is different. A multilayer film composed of an SiO2 deposited film 42 having a thickness of 600Åand an amorphous Si deposited film 44 having a thickness of 300Ålayered on the SiO2 deposited film 42 is provided on both sides of the ridge 26 and on a p-AlGaN cladding layer 22 on both sides of the ridge 26. Since the thickness of the SiO2 film and the Si film is set in such a way that the absorption coefficient in the basic horizontal and lateral mode is larger than that in the primary horizontal and lateral mode, the kink level is increased by suppressing the occurrence of a basic horizontal and lateral mode,Δn can be increased andθ// can be broadened without narrowing the ridge.
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