| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory and its manufacturing method where a defect is hard to occur at a tunnel insulating layer contained in a memory cell. SOLUTION: There are provided a step where step structure bodies 3' and 5' are formed on the upper surface side of a substrate 1, a step where a magnetic body film 6 and a tunnel insulating film 7 are sequentially formed on step structure body surfaces 3a', 3b' and 5a' of the step structure bodies 3a', 3b', and 5a', and a step where a part of the tunnel insulating film 7 is etched to form a tunnel insulating layer 7'. The tunnel insulating film 7 is bent to cover the step structure body surfaces 3a', 3b', and 5a'. Mechanical stress applied on the tunnel insulating film 7 concentrates to a bent part A. So the defects occurring at the tunnel insulating film 7 concentrate in the vicinity of the bent part A. Since the entire insulating layer 7' is formed above the first surface 3a' of the tunnel, the tunnel insulating layer 7' hardly contains defects.
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