PLASMA TREATING EQUIPMENT, PLASMA TREATING METHOD, THIN FILM FORMED BY THE EQUIPMENT AND THE METHOD, SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem that an excessive or too small an electric filed is generated in the vicinity of gap on a surface of each small electrode which is generated by superposition of high frequencies applied to each of the small electrode, in the case that a high frequency electrode is only divided into a plurality of the small electrodes, so that it is insufficient for generating a uni form plasma. SOLUTION: In this plasma treating equipment, phase adjusters 102, 104 are arranged corresponding to a plurality of the small electrodes 22, 24 for constituting high frequency electrodes. Adjustment is performed in such a manner that deviation in phases of high frequency voltages to be applied to the respective small electrodes is in a range of 120-140 degree, thereby improving distribution of film thickness and distribution of the etching speed.